| 发明名称 |
FIELD-EFFECT TRANSISTOR |
| 摘要 |
<p>Disclosed is a field-effect transistor characterized by using a compound represented by the formula (1) below as a semiconductor material. (In the formula (1), X1 and X2 independently represent a sulfur atom, a selenium atom or a tellurium atom; and R1 and R2 independently represent an unsubstituted or halogeno-substituted C1-C36 aliphatic hydrocarbon group.)</p> |
| 申请公布号 |
KR20090080042(A) |
申请公布日期 |
2009.07.23 |
| 申请号 |
KR20097007724 |
申请日期 |
2007.10.19 |
| 申请人 |
NIPPON KAYAKU KABUSHIKI KAISHA;NATIONAL UNIVERSITY OF CORPORATION HIROSHIMA UNIVERSITY |
发明人 |
TAKIMIYA KAZUO;EBATA HIDEAKI;KUWABARA HIROKAZU;IKEDA MASAAKI;YUI TATSUTO |
| 分类号 |
H01L51/30;C07D495/04;C07D517/04;H01L29/786 |
主分类号 |
H01L51/30 |
| 代理机构 |
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