| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode which can guarantee a stable quality and a high light extraction efficiency and also can improve various defects of conventional techniques. <P>SOLUTION: The light emitting diode 70 of Group III nitride-based semiconductor includes a substrate 71, a first Group III nitride layer 721, and a second Group III nitride layer 722. The substrate 71 includes a first surface 712 and a plurality of convex portions 711 which protrude from the first surface 712 and are surrounded with the first surface 712. The first Group III nitride layer 721 covers top surfaces of the plurality of convex portions 711 and is jointly formed by lateral growth starting at top surfaces of the convex portions. The second Group III nitride layer 722 is formed on the first surface 712, wherein a thickness of the second Group III nitride layer 722 is less than a height of the convex portions 711. Moreover, the first Group III nitride layer 721 and the second Group III nitride layer 722 are made of a same material. <P>COPYRIGHT: (C)2009,JPO&INPIT |
