| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device ensuring airtightness of a cavity, and also reducing an electric resistance of an the interconnection. <P>SOLUTION: A first interconnection 13 is formed along a groove of a substrate SB1 and on a bottom surface of the groove, and has a first thickness. A second interconnection 3 is electrically connected to the first interconnection 13 and has a second thickness larger than the first thickness. An acceleration sensing unit EL is electrically connected to the second interconnection 3. A sealing unit 6S has a portion opposed to the substrate SB1 with the first interconnection 13 therebetween, and surrounds the second interconnection 3 and the acceleration sensing unit EL on the substrate SB1. A cap 10 is arranged on the sealing unit 6S to form the cavity CV on a region of the substrate SB1 surrounded by the sealing unit 6S. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
