发明名称 |
SENSOR, SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A sensor is provided. The sensor includes semiconductor layer; a photodiode, an impurity-doped polycrystalline silicon layer; and a gate electrode. The photodiode is formed in the semiconductor layer. The impurity-doped polycrystalline silicon layer is formed above the semiconductor layer. The gate electrode applies a gate voltage to the polycrystalline silicon layer. A wiring layer is provided on a first surface of the semiconductor layer and light is incident on a second surface thereof.
|
申请公布号 |
US2009184387(A1) |
申请公布日期 |
2009.07.23 |
申请号 |
US20090354428 |
申请日期 |
2009.01.15 |
申请人 |
SONY CORPORATION |
发明人 |
TAKEUCHI KIYOSHI |
分类号 |
H01L31/02;H01L29/788;H01L31/0368 |
主分类号 |
H01L31/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|