发明名称 METHOD FOR PRODUCING A LAMINATED BODY HAVING A1-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING A1-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE
摘要 Disclosed is a process for producing a laminate, comprising (1) the step of providing a base substrate having a surface formed of a single crystal of a material different from a material for constituting an Al-based group III nitride single crystal layer to be formed, (2) the step of forming an Al-based group III nitride single crystal layer having a thickness of 10 nm to 1.5 µm on the single crystal plane of the provided base substrate, (3) the step of forming a non-single crystal layer having a thickness of not less than 100 times the thickness of the Al-based group III nitride single crystal layer on the Al-based group III nitride single crystal layer without breaking the Al-based group III nitride single crystal layer, and (4) the step of removing the base substrate. The production process can provide a substrate that is suitable for use as a base substrate for the production of a self-supporting substrate of an Al-based group III nitride single crystal, has a surface formed of a single crystal of an Al-based group III nitride, and is free from cracking and warpage.
申请公布号 CA2712148(A1) 申请公布日期 2009.07.23
申请号 CA20082712148 申请日期 2008.12.16
申请人 NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECH NOLOGY;TOKUYAMA CORPORATION 发明人 NAGASHIMA, TORU;HAKOMORI, AKIRA;TAKADA, KAZUYA;ISHIZUKI, MASANARI;KOUKITU, AKINORI;KUMAGAI, YOSHINAO
分类号 C30B29/38;C30B25/18 主分类号 C30B29/38
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