发明名称 |
METHOD FOR PRODUCING A LAMINATED BODY HAVING A1-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING A1-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE |
摘要 |
Disclosed is a process for producing a laminate, comprising (1) the step of providing a base substrate having a surface formed of a single crystal of a material different from a material for constituting an Al-based group III nitride single crystal layer to be formed, (2) the step of forming an Al-based group III nitride single crystal layer having a thickness of 10 nm to 1.5 µm on the single crystal plane of the provided base substrate, (3) the step of forming a non-single crystal layer having a thickness of not less than 100 times the thickness of the Al-based group III nitride single crystal layer on the Al-based group III nitride single crystal layer without breaking the Al-based group III nitride single crystal layer, and (4) the step of removing the base substrate. The production process can provide a substrate that is suitable for use as a base substrate for the production of a self-supporting substrate of an Al-based group III nitride single crystal, has a surface formed of a single crystal of an Al-based group III nitride, and is free from cracking and warpage. |
申请公布号 |
CA2712148(A1) |
申请公布日期 |
2009.07.23 |
申请号 |
CA20082712148 |
申请日期 |
2008.12.16 |
申请人 |
NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECH NOLOGY;TOKUYAMA CORPORATION |
发明人 |
NAGASHIMA, TORU;HAKOMORI, AKIRA;TAKADA, KAZUYA;ISHIZUKI, MASANARI;KOUKITU, AKINORI;KUMAGAI, YOSHINAO |
分类号 |
C30B29/38;C30B25/18 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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