METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of improving crystallinity in growing a plurality of semiconductor members made of group III nitride semiconductor.

SOLUTION: The method includes a process of forming a first buffer layer 30 on a base substrate 10, a process of making a mask 40 having a plurality of apertures on the first buffer layer 30, a second process of forming a plurality of second buffer layers 60a and 60b of group III nitride semiconductor on a plurality of regions exposed by the plurality of apertures on the first buffer layer 30, and a process of growing a plurality of semiconductor members of group III nitride semiconductor on the plurality of second buffer layers 60a and 60b.

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