| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of a writing operation and a reading operation of a resistance change type memory. SOLUTION: The resistance change type memory 100 includes a current suppression element connected in series to respective variable resistance layers and having a threshold voltage VF. When data are written or read, a first voltage V1 is applied to a first wiring line WL corresponding to a selection nonvolatile memory element, a second voltage V2 is applied to a second wiring line BL corresponding to the selection nonvolatile memory element, a third voltage V3 is applied to the first wiring line WL not corresponding to the selection nonvolatile memory element, and a fourth voltage V4 is applied to the second wiring line BL not corresponding to the selection nonvolatile memory element. A fifth voltage V5 is defined by V5=(V1+V2)/2. The relationships V2≤V3<V5 and V5<V4=V1 are satisfied. Moreover, the relationship (V1-V4)<VF or the relationship (V3-V2)<VF is satisfied. COPYRIGHT: (C)2009,JPO&INPIT |
