| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus optimizing condition of plasma so as to keep high in-plane uniformity of plasma processing with simple structure. <P>SOLUTION: In the plasma processing apparatus, an upper electrode 6 and a lower electrode 18 which severs as a platform are disposed in a processing container 4 to be vacuumed, at least one of the upper electrode and the lower electrode is applied with high frequency voltage from a high frequency power supply 14 through a matching circuit 12 to generate plasma, and a workpiece material W placed on the lower electrode is processed by a predetermined plasma processing. The plasma apparatus includes: variable impedance means 30 which is connected to one of the electrodes through a high-frequency line and allowed to change impedance of the electrode opposite to the electrode connected to the high-frequency line; and an impedance controlling unit 32 for controlling the variable impedance means. <P>COPYRIGHT: (C)2009,JPO&INPIT |
