| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an atmospheric plasma processing apparatus capable of consistently depositing a thin film of high film uniformity on a cylindrical base material with high productivity. <P>SOLUTION: The atmospheric plasma processing apparatus comprises at least one pair of base material driving units for rotating a cylindrical base material, at least one pair of electrodes, a high frequency power source connected to the electrodes, and a gas feed section for feeding gas containing thin film depositing gas. The base material driving unit moves the cylindrical base material along opposing surfaces of the opposing electrodes. The electrodes excite the gas fed from the gas feed section by the high frequency electric field by the high frequency power source under the atmospheric pressure or under the pressure in a vicinity thereof. By exposing the cylindrical base material moved along the opposing surfaces of the electrodes by at least one pair of base material driving units opposing each other to the excited gas, thin films can be deposited on at least two cylindrical base materials at the same time. <P>COPYRIGHT: (C)2009,JPO&INPIT |
