DESIGN DEVICE FOR SEMICONDUCTOR INTEGRATED CIRCUIT AND DESIGN METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To perform high-precision IDDQ calculation while taking into account in-chip variations for each parameter of leak factors of Tr. SOLUTION: Leakage current values of respective parameters are calculated based upon variation distribution average values for each condition through weighting by correlation (correlation value) between in-chip variation data or a distribution model of respective parameters of leakage current factors of transistors Tr alone and IDDQ values of the respective parameters, and an IDDQ value of the whole LSI is calculated to calculate the IDDQ value with high-precision. COPYRIGHT: (C)2009,JPO&INPIT