| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device in which an active layer with a reduced defect density is formed on a substrate made of silicon carbide, and to provide a method of manufacturing the same. SOLUTION: A semiconductor device 1 includes a substrate 2 which has an off angle of 50°to 65°relative to a plane direction [0001] and is made of silicon carbide, a buffer layer 21, and an active layer (an epitaxial layer 3, a p-type layer 4, and n+ regions 5 and 6). The buffer layer 21 is formed on the substrate 2 and is made of silicon carbide. The active layer is formed on the buffer layer 21 and is made of silicon carbide. The active layer has a lower micropipe density than the micropipe density of the substrate 2. Further, the active layer has a higher dislocation density with a Burgers vector in direction [0001] than the dislocation density of the substrate 2. COPYRIGHT: (C)2009,JPO&INPIT |
