发明名称 LAYER TRANSFER WITH REDUCTION OF POST-FRACTURE ROUGHNESS
摘要 <p>The invention provides a method of transferring a layer of a donor substrate onto a receiving substrate, the method comprising : a first step (S10) for hydrogen ions into the donor substrate intended to form a layer of microcavities or platelets; a secondstep (S12) of implanting ions; a step (S13) for bonding the face of the donor substrate with a face of the receiving substrate; a step (S14) for detachment to cause splitting at the layer of microcavities or platelets formed in the donor substrate. The method further comprises, between the two implantation steps, a step (S11) for priming anneal heat treatment carried out at a temperature in the range 300°C to 700°C and for a duration that is less than 10% of the duration necessary to cause splitting at the layer of microcavities or platelets formed in the donor substrate at the temperature employed during said priming anneal heat treatment.</p>
申请公布号 WO2009089969(A1) 申请公布日期 2009.07.23
申请号 WO2008EP67318 申请日期 2008.12.11
申请人 S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES;PERSONNIC, SEBASTIEN;BOURDELLE, KONSTANTIN 发明人 PERSONNIC, SEBASTIEN;BOURDELLE, KONSTANTIN
分类号 H01L21/762 主分类号 H01L21/762
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