发明名称 |
LAYER TRANSFER WITH REDUCTION OF POST-FRACTURE ROUGHNESS |
摘要 |
<p>The invention provides a method of transferring a layer of a donor substrate onto a receiving substrate, the method comprising : a first step (S10) for hydrogen ions into the donor substrate intended to form a layer of microcavities or platelets; a secondstep (S12) of implanting ions; a step (S13) for bonding the face of the donor substrate with a face of the receiving substrate; a step (S14) for detachment to cause splitting at the layer of microcavities or platelets formed in the donor substrate. The method further comprises, between the two implantation steps, a step (S11) for priming anneal heat treatment carried out at a temperature in the range 300°C to 700°C and for a duration that is less than 10% of the duration necessary to cause splitting at the layer of microcavities or platelets formed in the donor substrate at the temperature employed during said priming anneal heat treatment.</p> |
申请公布号 |
WO2009089969(A1) |
申请公布日期 |
2009.07.23 |
申请号 |
WO2008EP67318 |
申请日期 |
2008.12.11 |
申请人 |
S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES;PERSONNIC, SEBASTIEN;BOURDELLE, KONSTANTIN |
发明人 |
PERSONNIC, SEBASTIEN;BOURDELLE, KONSTANTIN |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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