| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of producing a photoelectric converting apparatus including the steps of improving photoelectric converting performance and an annealing process that may be applied to a mass-producing system. <P>SOLUTION: The method of producing the photoelectric converting apparatus includes the step of conducting the annealing process for 30 minutes to six hours under the temperature of 150 to 200°C in the atmospheric condition to a photoelectric converting apparatus provided with a photoelectric converting layer including a crystalline silicon layer. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
