| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To relieve concentration of a high electric field on a field plate end of a field effect transistor and then to use it as a high-breakdown-voltage semiconductor device. <P>SOLUTION: The field effect transistor 30 has a source electrode 34 and a drain electrode 36 disposed at a predetermined interval with a gate electrode 38 interposed on an electron traveling layer of a GaN-based epitaxial substrate 32, has a field plate 40 projecting in an eaves shape toward the drain electrode 36 over the gate electrode 38 formed, and also has a dielectric film 46 formed between the electron traveling layer of the epitaxial substrate 32 that the source electrode 34 and the drain electrode 36 come into ohmic contact with, and the field plate 40, the dielectric film 46 has a cut 50 made in level with a field plate end surface in a region right below the field plate 40 and extends from its lower end toward the drain electrode 36 to overlap the drain electrode 36. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
