| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve variation in transistor characteristics, reliability and yield. <P>SOLUTION: A field effect transistor comprises a substrate 101, a source electrode 102 and a drain electrode 103 arranged on the substrate, a semiconductor nanowire 104 connecting the source electrode and the drain electrode directly, particles 105 arranged near the semiconductor nanowire and smaller than the interval of the source electrode and the drain electrode, an insulating film 106 contiguous to the semiconductor nanowire and functioning as a gate insulating film, and a gate electrode 107 which can control electrical conduction of the semiconductor nanowire through the insulating film. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
