发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR SUBSTRATE PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide: a semiconductor substrate processing device improved in a temperature transition characteristic in raising/lowering the temperature of the semiconductor substrate, and temperature uniformity in a substrate surface; and a method of manufacturing a semiconductor device. SOLUTION: Heaters 6 are incorporated in a pedestal 4 heating a semiconductor substrate 1, and thermometers 9 are incorporated in a thermally-conductive plate 5 installed in contact with a surface of the pedestal 4 at positions facing the heaters 6. Based on a measurement temperature measured with the thermometers 9 by a temperature control unit 10 with the facing surfaces of the semiconductor substrate 1 and the thermally-conductive plate 5 held in parallel to each other at a certain minute distance by support bodies 7, and a preset set temperature, contact pressure between the pedestal 4 and the thermally-conductive plate 5 is adjusted by controlling fixing screws 2 and motors 3 along with temperature control of the heaters 6 to set the measurement temperature at the set temperature. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009164483(A) 申请公布日期 2009.07.23
申请号 JP20080002572 申请日期 2008.01.09
申请人 PANASONIC CORP 发明人 TANAKA MIKIHIRO;UJIMARU NAOHIKO
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址