| 摘要 |
PROBLEM TO BE SOLVED: To attain a semiconductor device using a MESFET which obtains desired carrier mobility and drain current, is operated to produce a high output and reduces a gate leakage current. SOLUTION: The semiconductor device 20 according to one embodiment of the invention comprises a semiconductor substrate 2 of a first conductivity type, a drain region 3 and a source region 3 of a second conductivity type formed on the semiconductor substrate 2, a channel region 4 which is formed on the semiconductor substrate 2 between the drain region 3 and the source regions 3 and which is made of two or more semiconductor layers of the first conductivity type, and a gate electrode 5 which is formed on the channel region 4 to form a Schottky contact with the channel region 4. COPYRIGHT: (C)2009,JPO&INPIT
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