METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor optical element, which can reduce abnormal growth of a buried layer. SOLUTION: A silicon oxide film of a thickness more than 2μm is grown on a semiconductor layer including a plurality of III-V compound semiconductor layers by adjusting film stress by using an induction coupled plasma CVD device and controlling bias power PBIAS. A mask of the silicon oxide film is formed on the semiconductor layer by etching. The semiconductor layer is dry-etched by using the mask to form a semiconductor mesa for an optical waveguide structure. The semiconductor mesa is buried and grown by using the mask. The film stress of the silicon oxide film of the mask at room temperature is -250 to -150 MPa. The film stress is -200 to O Mpa in a temperature range of 500-700°C. COPYRIGHT: (C)2009,JPO&INPIT