| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device that can provide an SBSI device, with improved mobility of electrons. SOLUTION: The manufacturing method of the semiconductor device includes the processes of forming an SiGe layer on an Si substrate 1; forming an Si layer 5 on the SiGe layer; etching the Si layer 5 and SiGe layer, to form a support hole (h) penetrating the Si layer 5 and SiGe layer; forming a base 11 in the support hole (h); etching the Si layer 5, to form a groove for exposing the SiGe layer (on front and inner sides on the paper surface); etching the SiGe layer through the groove to form a cavity portion 21 IN between the Si layer 5 and Si substrate 1; forming an a-Si film 25 at the cavity portion 21; and thermally oxidizing the a-Si film 25 to form an SiO<SB>2</SB>film 27. COPYRIGHT: (C)2009,JPO&INPIT
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