摘要 |
The invention concerns a method for producing a hybrid substrate, comprising a support substrate (40), a continuous buried insulator layer (42) and, on this layer, a hybrid layer (26) comprising alternating zones of a first material (26) and at least one second material (32), wherein these two materials are different by their nature and/or their crystallographic characteristics, said method comprising: the formation of a hybrid layer (26), comprising alternating zones of first and second materials, on a homogeneous substrate (22), an intermediate step of assembly of the free surface of the hybrid layer, or of a dielectric fromed on this surface, with a buffer substrate, the assembly of this hybrid layer, the continuous insulator layer (42) and the support substrate (40), the elimination of a part at least of the homogeneous substrate (40), before or after the assembly step. |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;COMMISSARIAT A L'ENERGIE ATOMIQUE;SIGNAMARCHEIX, THOMAS;FOURNEL, FRANCK;MORICEAU, HUBERT |
发明人 |
SIGNAMARCHEIX, THOMAS;FOURNEL, FRANCK;MORICEAU, HUBERT |