| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low reflective photomask blank suitable for shortened exposure wavelength. <P>SOLUTION: A photomask blank includes a single layer or multilayer light-shielding film 3, arranged on a translucent substrate 2 and mainly containing metals. The photomask blank is used for manufacturing a photomask which is to be subjected to exposure at a wavelength of not more than 200 nm. The photomask blank has an antireflection film 6, containing at least silicon and oxygen and/or nitrogen, on the light-shielding film 3; and the light-shielding film 3 is made of a material having etching durability, with respect to etching in the antireflection film 6. <P>COPYRIGHT: (C)2009,JPO&INPIT |
