| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an IGBT of a high resistance by suppressing physically carriers from being fluctuated below a trench gate. <P>SOLUTION: An IGBT 10 comprises an n<SP>+</SP>type emitter region 34, an n<SP>-</SP>type drift region 26, a (p) type body region 28 formed between the emitter region 34 and the drift region 26, a trench gate 40 extending in the body region 28 from the emitter region 34 toward the drift region 26, and an insulator protrusion 60. The protrusion 60 contacts the surface of the trench gate 40 at one end and protrudes at least partially into the drift region 26. <P>COPYRIGHT: (C)2009,JPO&INPIT |
