| 摘要 |
PROBLEM TO BE SOLVED: To provide polishing composition which suppresses the generation of a surface gap as well as establish high polishing speed in a polishing process for production of a wiring structure. SOLUTION: The polishing composition contains abrasive grains, a processing promoter, a dishing inhibitor, and water. In this case, the abrasive grains are comprised of at least first abrasive grains and second abrasive grains, and a ratio D<SB>L1</SB>/D<SB>S1</SB>of the average primary particle size D<SB>L1</SB>of the second abrasive grain to the average primary particle size D<SB>S1</SB>of the first abrasive grain is 5>D<SB>L1</SB>/D<SB>S1</SB>>1. The degree of association of the first abrasive grain is 1.8 or more and 5 or less, and the degree of association of the second abrasive grain is 2.5 or less. COPYRIGHT: (C)2009,JPO&INPIT |
