| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device equipped with a selection transistor allowing the threshold voltage of the selection transistor to be set sufficiently high, and having an excellent cutoff characteristic. SOLUTION: The nonvolatile semiconductor storage device includes a first lamination part 110 and a second lamination part 120. The first lamination part 110 includes a block insulating layer 113, a charge storage layer 114, and an n-type semiconductor layer 116 formed in contact with a sidewall of a tunnel insulating layer 115. The second lamination layer 120 includes a p-type semiconductor layer 125 formed in contact with a sidewall of a gate insulating layer 124. COPYRIGHT: (C)2009,JPO&INPIT
|
