| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which performance of an NMOS transistor is improved by applying depth-directional compressive stress. SOLUTION: A gate electrode of polycrystalline silicon is formed above an NMOS transistor region and a PMOS transistor region of a silicon substrate for a CMOS type semiconductor device, a first sidewall spacer is formed on a gate electrode sidewall, and when ions are implanted in the NMOS transistor region and PMOS transistor region to form a low-resistance source/drain region matching the first sidewall spacer, an upper portion of the gate electrode is made amorphous in the NMOS transistor. The first sidewall spacer is substantially removed at least in the NMOS transistor region, and a cap film is formed covering the gate electrode. A heat treatment is carried out to activate the low-resistance source/drain region is activated and recrystallize the gate electrode which is made amorphous, and the cap film is anisotropically etched and worked into a second sidewall spacer. COPYRIGHT: (C)2009,JPO&INPIT
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