Integrated spiral inductor including a shielding layer

摘要

The present invention provides an improved manufacturing stability of a semiconductor device provided with a spiral inductor. The semiconductor device 100 includes a silicon substrate 101, an element isolating oxide film embedded within the silicon substrate 101, a first insulating interlayer provided on the silicon substrate 101, a spiral inductor 120 provided on the first insulating interlayer, and a shielding layer, which is provided between the spiral inductor 120 and the silicon substrate 101, and elongates toward a direction along the surface of the substrate to provide a shield between the spiral inductor 120 and the silicon substrate 101. Then, a plurality of substrate remaining regions 131 formed by the silicon substrate 101 partially remaining in the element isolating oxide film in a form of islands from the upper viewpoint are selectively provided right under the polysilicon 105 in the region for forming the spiral inductor 120.