| 摘要 |
A manufacturing method of a semiconductor device is provided to reduce leakage current by forming a thick gate oxide layer on a sidewall part of a groove. A gate oxide layer(151) is formed on a front surface of a groove formed within a semiconductor substrate(100). The gate oxide layer is thickly formed on a sidewall part of the groove in comparison with a bottom part of the groove. In a manufacturing process, a hard mask pattern for exposing a gate region is formed on the semiconductor substrate. A first groove is formed by etching an exposed part of the semiconductor substrate. A conductive layer is formed on the hard mask pattern including the first groove. The conductive layer and the semiconductor substrate of the bottom surface of the first groove are etched to maintain the conductive layer in a shape of spacer on the sidewall of the first groove and to form a second groove including the first groove. The hard mask pattern is removed. The gate oxide layer is thickly formed on a sidewall of the second groove in comparison with a bottom part of the second groove. A gate is formed on the second groove including the gate oxide layer. A junction region(170) is formed within the semiconductor substrate of both sides of the gate.
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