SEMICONDUCTOR WAFER SUITABLE FOR FORMING A SEMICONDUCTOR JUNCTION DIODE DEVICE AND METHOD OF FORMING SAME

摘要

A method is provided of making a semiconductor wafer for a semiconductor junction diode device having a target forward voltage drop and a target reverse breakdown voltage. The method begins by doping a semiconductor substrate of a first conductivity type through the back surface with a first dopant of the first conductivity type in an amount sufficient to form a semiconductor junction diode device having a target forward voltage drop. Next, the substrate is doped through the front surface with a second dopant of the first conductivity type in an amount sufficient to form the semiconductor junction diode device such that it has a target reverse breakdown voltage.