| 摘要 |
<p>A positive resist material and a pattern forming method are provided to show excellent resolution and to supply patterns with reduce LER and the small amount of line edge roughness. A positive resist material is composed of a resin(A) and a compound(B). The resin is soluble in an alkali developing solution. The compound(B) reacts to an active photo-ray or radial ray and generates acids. The resin(A) consisting of repeat units of the formula (a), (b) and (c) is represented by the formula 1. The compound(B) is represented by the formula 2. In the formula 1, R1 is independently hydrogen or methyl group; m is 1 or 2; and n is 1 or 2. In the formula 2, R5, R6 and R7 are independently C1-C20 linear, branched or cyclo univalent hydrocarbonic group; and R8 is C4-C30 linear, branched or cyclo univalent hydrocarbonic group.</p> |
