发明名称 METHOD OF FABRICATING METAL OXIDE ON CARBON NANOTUBE AND METHOD OF FABRICATING CARBON NANOTUBE TRANSISTOR USING THE SAME
摘要 <p>Provided are a method for fabricating a metal oxidized film on a carbon nanotube and a carbon nanotube transistor using the same. A method for fabricating a metal oxidized film on a carbon nanotube comprises: a first step of forming a chemical functional group(132) on the surface of a carbon nanotube(130); and a second step of forming the metal oxidized film on the carbon nanotube with the chemical functional group. The chemical functional group includes a hydroxyl group. For the introduction of the chemical functional group, metal oxidized film forming precursors and water are supplied into a reaction chamber at the same time.</p>
申请公布号 KR20090079427(A) 申请公布日期 2009.07.22
申请号 KR20080005381 申请日期 2008.01.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MIN, YO SEP;BAE, EUN JU;KIM, UN JEONG;LEE, EUN HONG
分类号 B82B3/00;C01B31/02 主分类号 B82B3/00
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