METHOD OF FABRICATING METAL OXIDE ON CARBON NANOTUBE AND METHOD OF FABRICATING CARBON NANOTUBE TRANSISTOR USING THE SAME
摘要
<p>Provided are a method for fabricating a metal oxidized film on a carbon nanotube and a carbon nanotube transistor using the same. A method for fabricating a metal oxidized film on a carbon nanotube comprises: a first step of forming a chemical functional group(132) on the surface of a carbon nanotube(130); and a second step of forming the metal oxidized film on the carbon nanotube with the chemical functional group. The chemical functional group includes a hydroxyl group. For the introduction of the chemical functional group, metal oxidized film forming precursors and water are supplied into a reaction chamber at the same time.</p>
申请公布号
KR20090079427(A)
申请公布日期
2009.07.22
申请号
KR20080005381
申请日期
2008.01.17
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
MIN, YO SEP;BAE, EUN JU;KIM, UN JEONG;LEE, EUN HONG