| 摘要 |
A substrate supporting apparatus and a substrate processing apparatus having the same are provided to reduce leakage current between a heating unit and an electrode unit by forming a sufficient resistance. A substrate supporting apparatus(100) includes an upper plate(110), a lower plate(120), an insulating unit(130), an electrode unit(140), and a heating unit(150). A substrate(W) is loaded directly on the upper plate. The lower plate is positioned under the upper plate. The insulating unit is inserted between the upper plate and the lower plate. The electrode unit is inserted between the upper plate and the insulating unit. The electrode unit concentrates the plasma on the substrate loaded on the upper plate. The heating unit is inserted between the insulating unit and the lower plate. The heating unit is loaded on the upper plate. The insulating unit is formed with a material having a volume resistance at temperature of 400-800 degrees centigrade in order to reduce leakage current between the heating unit and the electrode unit.
|
