| 摘要 |
<p>A method for forming a metal line of a semiconductor device is provided to deposit effectively a metal layer for metal line within a wiring forming region including a contact hole and a trench. A plurality of insulating layers(104,106) equipped with contact holes are formed on the semiconductor substrate(100). A TiN layer is formed on an upper surface of the insulating layer including the surfaces of the contact holes. An anti-reflection layer is formed on an upper surface of the TiN layer. The anti-reflective layer, the TiN layer, and the insulating layers are etched to form a trench at an upper end part of the contact hole. The anti-reflective layer is removed. A metal layer is formed to bury the trench and the contact hole.</p> |
