| 摘要 |
<p>A manufacturing method of a MOSFET device is provided to suppress an increasing effect of a variable width of a threshold voltage by preventing a lowering effect of the threshold voltage. An active region is protruded by recessing a part of an isolation layer(320) of a semiconductor substrate(300) including an active region(310). A first gate oxide layer(331) is formed on a surface of the active region. An ion implantation(340) process for adjusting the threshold voltage is performed on the active region on which the first gate oxide layer is formed. A second gate oxide layer is formed on the active region into which the ions are implanted. A gate electrode material is formed on the semiconductor substrate on which the second gate oxide layer is formed.</p> |
