发明名称 |
GROUP III ELEMENT NITRIDE SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, PROCESSES FOR PRODUCING THESE, AND PROCESS FOR PRODUCING SEMICONDUCTOR ELEMENT |
摘要 |
A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate (1) is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×10 14 , and the number of silicon atoms per square centimeter of the surface (3) is not more than 3×10 13 ; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface (3) is not more than 3×10 13 , and a haze level of the surface (3) is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×10 14 , and a haze level of the surface (3) is not more than 5 ppm. |
申请公布号 |
EP2080823(A1) |
申请公布日期 |
2009.07.22 |
申请号 |
EP20070829399 |
申请日期 |
2007.10.09 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
ISHIBASHI, KEIJI;HACHIGO, AKIHIRO;IRIKURA, MASATO;NAKAHATA, SEIJI |
分类号 |
C30B29/38;C30B33/00;H01L21/205;H01L21/304;H01L33/00;H01L33/16;H01L33/32 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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