| 摘要 |
<p>A phase change memory device and a manufacturing method thereof are provided to prevent generation of a change of a composition due to etching loss at an edge place of a phase change material layer by forming a phase change layer as a shape of plug. A phase change memory device includes a first electrode(120), insulating layers(110,130,160), a plug-type phase change layer(142), and a bit line(180). The insulating layer is formed to cover the first electrode. The plug-type phase change layer is formed to be in contact with the first electrode within the insulating layer. The bit line is formed to be in contact with the phase change layer on the insulating layer. The bit line is used for playing a role of the second electrode.</p> |
