SILICON SINGLE CRYSTAL HAVING HIGH RESISTIVITY, PRODUCING METHOD AND WAFER THEREOF

摘要

A silicon single crystal having a high resistance, a manufacturing method thereof, and a wafer are provided to enhance a resistant characteristic of an oxide layer by increasing resistivity. A silicon single crystal having a high resistance is grown by using a Czochralski method. The silicon single crystal having the high resistance includes nitrogen having density of 1x10^12-5x10^14/cm^3 and barium having density of 1x10^9-1x10^11/cm^3. The initial density of oxygen is 8-13ppma. The final density of oxygen is 3-6ppma after the third thermal process is performed. The resistivity is 100Фcm and more. A wafer having a high resistance is manufactured by using the silicon single crystal.