发明名称 MICROELECTRONIC DEVICE INCLUDING BRIDGING INTERCONNECT TO TOP CONDUCTIVE LAYER OF PASSIVE EMBEDDED STRUCTURE AND METHOD OF MAKING SAME
摘要 <p>A microelectronic device, a method of fabricating the device, and a system including the device. The device includes: a substrate including a polymer build-up layer, and a passive structure embedded in the substrate. The passive structure includes a top conductive layer overlying the polymer build-up layer, a dielectric layer overlying the top conductive layer, and a bottom conductive layer overlying the dielectric layer. The device further includes a conductive via extending through the polymer build-up layer and electrically insulated from the bottom conductive layer, an insulation material insulating the conductive via from the bottom conductive layer, and a bridging interconnect disposed at a side of the top conductive layer facing away from the dielectric layer, the bridging interconnect electrically connecting the conductive via to the top conductive layer.</p>
申请公布号 KR20090079263(A) 申请公布日期 2009.07.21
申请号 KR20097012208 申请日期 2007.12.06
申请人 INTEL CORPORATION 发明人 SALAMA ISLAM;SEH HUANKIAT;MIN YONGKI
分类号 H05K1/18;H05K3/46 主分类号 H05K1/18
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