| 摘要 |
A method of forming a fine pattern in a semiconductor device includes forming an target layer, a hard mask layer and first sacrificial patterns on a semiconductor substrate; forming an insulating layer and a second sacrificial layer on the hard mask layer and the first sacrificial patterns; performing the first etch process so as to allow the second sacrificial layer remain on the insulating layer between the first sacrificial patterns for forming second sacrificial patterns; removing the insulating layer placed on the first sacrificial patterns and between the first and second sacrificial patterns; etch the hard mask layer through the second etch process utilizing the first and second sacrificial patterns as the etch mask to form a mask pattern; and etch the target layer through the third etch process utilizing the hard mask pattern as the etch mask.
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