发明名称 |
Phase-changeable memory device and method of manufacturing the same |
摘要 |
In a semiconductor memory device and a method of manufacturing the same, an insulating layer is formed on a substrate having a logic region on which a first pad is provided and a cell region on which a second pad and a lower electrode are subsequently provided. The insulating layer is etched to be a first insulating layer pattern having a first opening exposing the first pad. A first plug is formed in the first opening. The first insulating layer pattern where the first plug is formed is etched to be a second insulating layer pattern having a second opening exposing the lower electrode. A second plug including a phase-changeable material is formed in the second opening. A conductive wire and an upper electrode are formed on the first plug and the second plug, respectively.
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申请公布号 |
US7563639(B2) |
申请公布日期 |
2009.07.21 |
申请号 |
US20070733131 |
申请日期 |
2007.04.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN HEE-JU;SHIN JONG-CHAN;PARK SOON-OH;AN HYEONG-GEUN;KO HAN-BONG |
分类号 |
H01L21/06 |
主分类号 |
H01L21/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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