| 摘要 |
A manufacturing method of a semiconductor device is provided to form bit lines having improved top and sidewall profiles by performing a first and second insulating layer processes and a plasma treatment process in an insulating layer deposition process. A plurality of metal layer patterns are formed on an upper surface of a semiconductor substrate(100). A first insulating layer is formed on the upper surface of the semiconductor substrate in order to fill up a gap between the metal layer patterns. A first planarization process is performed to planarize upper parts of the metal layer patterns. The first insulating layer is removed. A light etch process is performed to reduce surface roughness of both sidewalls of the metal layer patterns. A second insulating layer is formed to cover the metal layer patterns.
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