| 摘要 |
A manufacturing method of a CMOS image sensor including at least one of the following steps. Forming an under-structure including a photodiode, a metal wire, and an interlayer insulation film for insulation between a metal pad and the metal wire. Forming a passivation layer on and/or over the under-structure. Selectively etching the passivation layer and the interlayer insulation film below the passivation layer to form a color filter region and a metal pad exposure region. Simultaneously etching the color filter region and the metal pad exposure region. Sequentially forming a plurality of color filters and a plurality of micro lenses on the interlayer insulation film etched to form the color filters.
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