| 摘要 |
<p>A manufacturing method of a flash memory device is provided to reduce an interference effect and to improve characteristics of the flash memory device by increasing a gap between a control gate and an active region. A semiconductor substrate(110) is provided. A trench is formed in an isolation region of the semiconductor substrate. A multi-layered film including a tunnel insulating layer(112) and a first conductive layer(114) is formed in an active region of the semiconductor substrate. A plurality of liner insulating layers(124a,126a) having different etch rates are formed on an inner wall of the trench and a surface of the multi-layered film. A first insulating layer(128a) is formed on the liner insulating layers in order to fill up the trench. An etch process is performed to protrude the liner nitride layers in comparison with the first insulating layer according to an etch rate different between the liner insulating layers. A plurality dielectric layers(130,132,134) are formed on the entire structure of the semiconductor substrate along a surface of the exposed trench. A second conductive layer(136) is formed on the semiconductor substrate including the dielectric layers.</p> |
