LASER PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

A laser processing apparatus and a method for manufacturing a semiconductor substrate are provided to obtain a sufficient surface flatness and to improve productivity by reducing the number of shots. A laser processing apparatus includes a laser beam irradiation unit, a nitrogen gas injection unit, and a microwave irradiation unit. The laser beam irradiation unit irradiates a laser beam onto a single crystalline semiconductor layer(1406) which is fixed on a first surface of a supporting substrate by a buffer layer. The nitrogen gas injection unit injects a heated nitrogen gas(307) onto a laser beam irradiation region of the single crystalline semiconductor layer. The microwave irradiation unit irradiates a microwave from a second surface opposing the first surface of the supporting substrate to the single crystalline semiconductor layer.