发明名称 TREATMENT METHOD FOR SURFACE OF SUBSTRATE, METHOD OF FABRICATING IMAGE SENSOR BY USING THE TREATMENT METHOD AND IMAGE SENSOR FABRICATED BY THE SAME
摘要 A processing method of a substrate surface, an image sensor manufacturing method using the same, and an image sensor manufactured thereby are provided to improve a low illumination characteristic of an image sensor by removing defects of a surface of a substrate. A silicon substrate preparation process is performed to prepare a silicon substrate having a surface defect(S510). A chemical solution supply process is performed to supply a chemical solution for processing a surface of the silicon substrate(S520). A chemical oxide layer manufacturing process is performed to consume the surface of the silicon substrate and to manufacture a chemical oxide layer on the silicon substrate(S530). A surface defect removal process is performed to remove defects from the surface of the silicon substrate.
申请公布号 KR20090079107(A) 申请公布日期 2009.07.21
申请号 KR20080005079 申请日期 2008.01.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, GI BUM;NOH, HYUN PIL
分类号 H01L21/306;H01L27/146 主分类号 H01L21/306
代理机构 代理人
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