发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term "an integrated circuit film" means a film-like integrated circuit which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring. |
申请公布号 |
US7564139(B2) |
申请公布日期 |
2009.07.21 |
申请号 |
US20070947835 |
申请日期 |
2007.11.30 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KUWABARA HIDEAKI;MARUYAMA JUNYA;OHNO YUMIKO;TAKAYAMA TORU;GOTO YUUGO;ARAKAWA ETSUKO;YAMAZAKI SHUNPEI |
分类号 |
H01L29/40;H01L29/417;H01L21/20;H01L21/3205;H01L21/336;H01L21/56;H01L21/60;H01L21/68;H01L23/34;H01L23/52;H01L25/04;H01L25/18;H01L29/06;H01L29/786 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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