发明名称 Semiconductor device and method for manufacturing the same
摘要 It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term "an integrated circuit film" means a film-like integrated circuit which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring.
申请公布号 US7564139(B2) 申请公布日期 2009.07.21
申请号 US20070947835 申请日期 2007.11.30
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KUWABARA HIDEAKI;MARUYAMA JUNYA;OHNO YUMIKO;TAKAYAMA TORU;GOTO YUUGO;ARAKAWA ETSUKO;YAMAZAKI SHUNPEI
分类号 H01L29/40;H01L29/417;H01L21/20;H01L21/3205;H01L21/336;H01L21/56;H01L21/60;H01L21/68;H01L23/34;H01L23/52;H01L25/04;H01L25/18;H01L29/06;H01L29/786 主分类号 H01L29/40
代理机构 代理人
主权项
地址