| 摘要 |
A plasma processing apparatus is provided remove a foreign material formed on the rear side of a substrate by arranging the substrate on a region where high density plasma generated. A plasma processing apparatus is composed of a chamber(100), a bottom electrode(300), an upper electrode(200), and a substrate support(400). The chamber is formed as a cylindrical or a square box shape, and a certain space is prepared in order to process the substrate(S). The bottom electrode is arranged at the lower part inside the chamber and ejects a reaction gas. The upper electrode is arranged to face a lower electrode and the upper electrode includes an electrode plate and an insulating member. |
