FABRICATION METHOD OF SEMICONDUCTOR DEVICE HAVING ISOLATION PROCESS

摘要

A manufacturing method of a semiconductor device including an isolation process is provided to reduce a depth of an isolation pattern by applying a bias to a conductive pattern included in the isolation pattern. A plurality of isolation patterns including conductive patterns(14a) are formed on an upper surface of a semiconductor substrate(10). A gap(19) is formed between the isolation patterns. An active pattern(20) is formed on the semiconductor substrate in order to bury the gap formed between the isolation patterns. A gate insulating layer(22) is formed on an upper surface of the isolation pattern and an upper surface of the active pattern. A gate pattern(24) is formed on an upper surface of the gate insulating layer.