| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to increase a yield and to shorten a process time by reducing overlay residuals in an exposure process in order to improve pattern accuracy of a substrate. An interlayer dielectric(212) is formed on an upper surface of a semiconductor substrate(210). A first hard mask layer(214) is formed on an upper surface of the interlayer dielectric in a spin-on manner. A second hard mask layer(216) is formed on an upper surface of the first hard mask. A photoresist layer(218) is formed on an upper surface of the second hard mask. The first hard mask is formed with amorphous carbon. The second hard mask layer is formed with a BARC(Bottom Anti-Reflective Coating) including silicon. The second hard mask layer is used for performing an anti-reflective layer function and a hard mask function at the same time.</p> |
