SEED ATTACHMENT METHED FOR LARGE DIAMETER HIGH QUALITY SIC SINGLECRYSTAL GROWTH

摘要

A seed crystal attachment method for growing a high-quality SiC single crystal ingot having a large diameter is provided to improve separation of a seed crystal and a grown ingot from a graphite crucible cover or a graphite seed crystal holder by attaching a SiC single crystal on a surface of a graphite seed crystal holder. A SiC seed crystal is attached on a surface of a graphite seed crystal holder(201). The SiC seed crystal is attached on the surface of the graphite seed crystal holder by using an adhesive. A SiC buffer layer(202) is uniformly formed on a surface of the graphite seed crystal holder. The SiC buffer layer is uniformly formed by using a PVD(Physical Vapor Deposition) method, a CVD(Chemical Vapor Deposition) method, a HTCVD method, a CVI(Chemical Vapor Infiltration) method, and a CST(Close Space Technique) method.