| 摘要 |
Intended is to provide a magnetron sputtering device which can abrade homogeneously the outer peripheral edge portion of a target thereby to have a high target using efficiency and which hardly has an abnormal discharge so that it can form an excellent thin film. The magnetron sputtering device comprises a magnet assembly (5) at the back of a target (42) arranged to confront a substrate to be treated. The magnet assembly (5) includes a central magnet (52) arranged linearly along the longitudinal direction, and a peripheral magnet (53) arranged to enclose the periphery of the central electrode, such that the magnets have different polarities on the target side. At the longitudinal end portions of the magnet assembly, the positions, in which the vertical components of the magnetic field are 0, of the individual magnetic fluxes generated in a tunnel shape between the central magnet and the peripheral magnet are locally shifted within a predetermined range to the sides of the central magnet.
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